elektronische bauelemente sdt1216 -16a , -12v , r ds(on) 21 m ? p-channel enhancement mode power mosfet 28-jul-2014 rev.a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description the sdt1216 provide the designer with the b est combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the dfn2*2-6j package is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size dfn2*2-6l 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -12 v gate-source voltage v gs 8 v continuous drain current (t 10s) i d -16 a pulsed drain current 1 i dm -65 a power dissipation@ t a = 25c 2 2.5 maximum power dissipation @t c = 25c 3 p d 18 w thermal resistance junction-ambient 4 r ja 50 c / w thermal resistance from junction to case 4 r jc 6.9 c / w operating junction & storage temperature t j , t stg 150, -55~150 c dfn2*2-6j 1216 top view millimeter millimeter ref. min. max. ref. min. max. a 1.924 2.076 h 0.20 - b 1.924 2.076 i 0.85 1.05 c 0.46 0.66 j 0.70 0.90 d 0.65 typ. k 0.20 0.40 e 0.20 0.40 l 0.203ref f 0.80 1.00 m 0.00 0.05 g 0.174 0.326
elektronische bauelemente sdt1216 -16a , -12v , r ds(on) 21 m ? p-channel enhancement mode power mosfet 28-jul-2014 rev.a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -12 - - v v gs =0, i d = -250 a gate-source leakage current i gss - - 100 na v gs = 8v, v ds =0 drain-source leakage current i dss - - -1 a v ds = -12v, v gs =0 gate-threshold voltage 5 v gs(th) -0.4 -0.7 -1 v v ds =v gs , i d = -250 a forward transconductance 5 g fs - 40 - s v ds = -10v, i d = -6.7a - - 21 v ds = -4.5v, i d =-6.7a static drain-source on-resistance 5 r ds(on) - - 27 m v gs = -2.5v, i d = -6.2a switching parameters 6 - 60 - i d = -10a v ds = -6v v gs = -8v total gate charge q g - 35 - gate-source charge q gs - 5 - gate-drain change q gd - 10 - nc i d = -10a v ds = -6v v gs = -4.5v input capacitance c iss - 2700 - output capacitance c oss - 680 - reverse transfer capacitance c rss - 590 - pf v gs =0 v ds = -10v f =1.0mhz drain-source diode characteristics diode forward current 5 i s - - -16 a diode forward voltage 4 v sd - - -1.2 v i s = -8a, v gs =0 note: 1. repetitive rating: pulse width limited by maxim um junction temperature. 2. this test is performed with no heat sink at ta= 25 . 3. this test is performed with infinite heat sink at tc=25 . 4. surface mounted on fr4 board, t 10s. 5. pulse test: pulse with 300 s,duty cycle 2%. 6. guaranteed by design, not subject to production testing.
elektronische bauelemente sdt1216 -16a , -12v , r ds(on) 21 m ? p-channel enhancement mode power mosfet 28-jul-2014 rev.a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
|
